Antireflective surface of nanostructures fabricated by CF<sub>4</sub> plasma etching
In this research, the nanostructures surface were fabricated by the CF4 plasma etching process on the SiO2-based substrates for antireflection applications. The nickel films were firstly deposited on the substrates by the sputtering system. The prepared Ni layers were then annealed at 500Â°C for 1 minute in order to promote dewetting process to be used as metal masks. During the etching process, CF4 etching condition was performed for 15-60 min to create the SiO2 nanopillars. After the etching process, the samples were immersed in nitric acid for 5 min to remove the nickel masks. The SiO2 nanopillars without Ni were investigated for physical morphologies and optical properties by the field-emission scanning electron microscopy (FESEM) and Â UV-Vis-NIR spectroscopy respectively. The results showed that the etching conditions greatly affected the sizes and shapes of the nanostructures, as well as improved the antireflection properties of the SiO2 based materials.
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