@article{RUKKUN_AIEMPANAKIT_REAKAUKOT_WONGPISAN_WAREE_AIEMPANAKIT_2021, place={Bangkok, Thailand}, title={Investigation of deposition parameters on the structural properties and hardness of TiAlN films deposited via reactive pulsed DC magnetron sputteringInvestigation of deposition parameters on structural properties and hardness of TiAlN films deposited by reactive pulsed DC magnetron sputtering}, volume={31}, url={https://jmmm.material.chula.ac.th/index.php/jmmm/article/view/1083}, DOI={10.55713/jmmm.v31i2.1083}, abstractNote={<p class="western" align="left"><span style="font-family: Calibri, serif;"><span style="font-size: small;"><span style="font-family: Times New Roman, serif;">In this work, titanium aluminum nitride (TiAlN) films were deposited on a silicon substrate via reactive pulsed DC magnetron sputtering. The effect of deposition parameters such as nitrogen gas </span><span style="font-family: Times New Roman, serif;">flow rate, substrate temperature, and bias voltage on the structural and mechanical properties of TiAlN</span> <span style="font-family: Times New Roman, serif;">films was investigated. The crystal structure, morphology, and hardness of TiAlN films were characterized</span> <span style="font-family: Times New Roman, serif;">via X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM, and nanoindentation.</span><span style="font-family: Times New Roman, serif;"> An improved crystallinity of TiAlN films was obtained by varying the substrate temperature and bias </span><span style="font-family: Times New Roman, serif;">voltage. The morphology of the TiAlN film exhibited a columnar structure, and the morphology gradually</span><span style="font-family: Times New Roman, serif;"> changed with the increase in bias voltage. The films thickness decreased upon increasing the nitrogen </span><span style="font-family: Times New Roman, serif;">gas flow rate, substrate temperature, and bias voltage. In addition, the hardness of the TiAlN film was</span> <span style="font-family: Times New Roman, serif;">enhanced by adjusting the nitrogen gas flow rate, substrate temperature, and bias voltage, and a suitable</span> <span style="font-family: Times New Roman, serif;">elemental component ratio was obtained. A maximum hardness of approximately 28.9 GPa was obtained</span> <span style="font-family: Times New Roman, serif;">for the TiAlN film with a nitrogen gas flow rate of 4 sccm, substrate temperature of 500ºC, bias voltage</span><span style="font-family: Times New Roman, serif;"> of 100 V, and an elemental composition Al/(Al + Ti) of approximately 34.35%.</span></span></span></p>}, number={2}, journal={Journal of Metals, Materials and Minerals}, author={RUKKUN, Jariyaporn and AIEMPANAKIT, Kamon and REAKAUKOT, Pimchanok and WONGPISAN, Witthawat and WAREE, Kirati and AIEMPANAKIT, Montri}, year={2021}, month={Jun.}, pages={118–122} }