@article{RAZZOKOV_ESHCHANOV_2022, place={Bangkok, Thailand}, title={Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate}, volume={32}, url={https://jmmm.material.chula.ac.th/index.php/jmmm/article/view/1260}, DOI={10.55713/jmmm.v32i2.1260}, abstractNote={<p>Thermodynamic calculations have been carried out for growing crystalline Si<sub>1-x</sub>Ge<sub>x</sub> solid solution epitaxial films on Si<100> and Si<111> substrates from a tin solution-melt by liquid-phase epitaxy. Nanoclusters are thought to be involved in crystal growth. To determine the optimal conditions for obtaining a Si<sub>1-x</sub>Ge<sub>x</sub> crystal from a Si-Ge-Sn solution system, we focused on the change in Gibbs energy and the size of the nanoclusters involved in crystal formation. On this basis, a film with a thickness of 5 µm to 8 µm was experimentally obtained in the temperature range from Т<sub>c.s.</sub>=1135 K (crystallization start temperature) to Т<sub>c.t.</sub>=1023 K (crystallization termination temperature). It was also possible to reduce the dislocation density at the substrate-film boundary (up to 3 ´ 10<sup>4</sup> cm<sup>-2</sup>) and along the growth direction (film surfaces up to 8 ´ 10<sup>3</sup> cm<sup>-2</sup>). A method of thermodynamic prediction for obtaining semiconductor structures has been developed.</p>}, number={2}, journal={Journal of Metals, Materials and Minerals}, author={RAZZOKOV, Alijon Shonazarovich and ESHCHANOV, Khushnudbek Odilbekovich}, year={2022}, month={Jun.}, pages={83–87} }