TY - JOUR AU - RAZZOKOV, Alijon Shonazarovich AU - ESHCHANOV, Khushnudbek Odilbekovich PY - 2022/06/30 Y2 - 2024/03/29 TI - Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate JF - Journal of Metals, Materials and Minerals JA - J Met Mater Miner VL - 32 IS - 2 SE - Original Research Articles DO - 10.55713/jmmm.v32i2.1260 UR - https://jmmm.material.chula.ac.th/index.php/jmmm/article/view/1260 SP - 83-87 AB - <p>Thermodynamic calculations have been carried out for growing crystalline Si<sub>1-x</sub>Ge<sub>x</sub> solid solution epitaxial films on Si&lt;100&gt; and Si&lt;111&gt; substrates from a tin solution-melt by liquid-phase epitaxy. Nanoclusters are thought to be involved in crystal growth. To determine the optimal conditions for obtaining a Si<sub>1-x</sub>Ge<sub>x</sub> crystal from a Si-Ge-Sn solution system, we focused on the change in Gibbs energy and the size of the nanoclusters involved in crystal formation. On this basis, a film with a thickness of 5 µm to 8 µm was experimentally obtained in the temperature range from Т<sub>c.s.</sub>=1135 K (crystallization start temperature) to Т<sub>c.t.</sub>=1023 K (crystallization termination temperature). It was also possible to reduce the dislocation density at the substrate-film boundary (up to 3 ´ 10<sup>4</sup> cm<sup>-2</sup>) and along the growth direction (film surfaces up to 8 ´ 10<sup>3</sup> cm<sup>-2</sup>). A method of thermodynamic prediction for obtaining semiconductor structures has been developed.</p> ER -