Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate

Authors

  • Alijon Shonazarovich RAZZOKOV Department of Physics, Urgench State University, 14 h Kh. Alimjan str. 220100, Urgench, Uzbekistan
  • Khushnudbek Odilbekovich ESHCHANOV Department of Chemistry, Urgench State University, 14 h Kh. Alimjan str. 220100, Urgench, Uzbekistan

DOI:

https://doi.org/10.55713/jmmm.v32i2.1260

Keywords:

Solution-melt, solid solution, dislocation, nanocluster, activity coefficient

Abstract

Thermodynamic calculations have been carried out for growing crystalline Si1-xGex solid solution epitaxial films on Si<100> and Si<111> substrates from a tin solution-melt by liquid-phase epitaxy. Nanoclusters are thought to be involved in crystal growth. To determine the optimal conditions for obtaining a Si1-xGex crystal from a Si-Ge-Sn solution system, we focused on the change in Gibbs energy and the size of the nanoclusters involved in crystal formation. On this basis, a film with a thickness of 5 µm to 8 µm was experimentally obtained in the temperature range from Тc.s.=1135 K (crystallization start temperature) to Тc.t.=1023 K (crystallization termination temperature). It was also possible to reduce the dislocation density at the substrate-film boundary (up to 3 ´ 104 cm-2) and along the growth direction (film surfaces up to 8 ´ 103 cm-2). A method of thermodynamic prediction for obtaining semiconductor structures has been developed.

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References

Wang and N. Quitoriano, "SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions", Journal of Crystal Growth, vol. 510, pp. 65-75, 2019. Available: 10.1016/j.jcrysgro.2019.01.014

P. Hansson, J. Werner, L. Tapfer, L. Tilly and E. Bauser, "Liquid‐phase epitaxy and characterization of Si1−xGexlayers on Si substrates", Journal of Applied Physics, vol. 68, no. 5, pp. 2158-2163, 1990. Available: 10.1063/1.346572

. S. Chaurasia, S. Raghavan and S. Avasthi, "High Quality Epitaxial Germanium on Si (110) using Liquid Phase Crystallization for Low—Cost III-V Solar-Cells", 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018. Available: 10.1109/pvsc.2018.8548031

. G. Wang et al., "A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)", Applied Physics Letters, vol. 94, no. 10, p. 102115, 2009. Available: 10.1063/1.3097245

. J. Speck, M. Brewer, G. Beltz, A. Romanov and W. Pompe, "Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers", Journal of Applied Physics, vol. 80, no. 7, pp. 3808-3816, 1996. Available: 10.1063/1.363334

. E. Fitzgerald et al., "Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates", Applied Physics Letters, vol. 59, no. 7, pp. 811-813, 1991. Available:10.1063/1.105351

. A. O'Reilly and N. Quitoriano, "Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy", Journal of Crystal Growth, vol. 483, pp. 223-227, 2018. Available: 10.1016/j.jcrysgro.2017.12.010.

A. Saidov and A. Razzokov, "Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex", Siberian Journal of Physics, vol. 15, no. 2, pp. 84-91, 2020. Available: 10.25205/2541-9447-2020-15-2-84-91

. Victor I. Fistul. Impurities in Semiconductors: Solubility, Migration and Interactions, CRC Press. 2004.

. Gaskell, D.R., & Laughlin, D.E. Introduction to the Thermodynamics of Materials (6th ed.). CRC Press. 2017.

. S.Uda, X.Huang, S.Koh. Journal of Crystal Growth, vol. 281, pp. 481–491, 2005.

. Liu, X. Y. "Heterogeneous nucleation or homogeneous nucleation?". The Journal of Chemical Physics, vol. 112 no. 22, pp. 9949–9955, 2000. Available: 10.1063/1.481644.

. Razzokov, A.Sh., Khakimov, N.Z., Davletov, I.Y., Eshchanov, Kh.O. and Matnazarov, A.R. "Obtaining a structurally perfect semiconductor solid solution Si1-xGex with electrophysical and photoelectric properties,"Scientific-technical journal: vol. 24: Iss. 5, pp. 11, 2020. Available at: https://uzjournals.edu.uz/ferpi/vol24/iss5/11

. Arthur D. Pelton. Phase Diagrams and Thermodynamic Modeling of Solutions, Elsevier, 2019. DOI:10.1016/C2013-0-19504-9

. Hans J. Scheel, T. Fukuda. “Crystal Growth Technology”, Wiley & Sons, Chichester UK hardcover, 2003.

. Nguyen T. K. Thanh, N. Maclean, and S. Mahiddine, Mechanisms of Nucleation and Growth of Nanoparticles in Solution, Chemical Reviews, 114(15), pp. 7610-7630, 2014.

. Ivan Markov. Crystal Growth For Beginners: Fundamentals of Nucleation, Crystal Growth And Epitaxy (Third ed.). Singapore: World Scientific, 2016. DOI: 10.1142/10127

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Published

2022-06-30

How to Cite

[1]
A. S. RAZZOKOV and K. O. . ESHCHANOV, “Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate”, J Met Mater Miner, vol. 32, no. 2, pp. 83–87, Jun. 2022.

Issue

Vol. 32 No. 2 (2022)

Section

Original Research Articles

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