Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate
DOI:
https://doi.org/10.55713/jmmm.v32i2.1260Keywords:
Solution-melt, solid solution, dislocation, nanocluster, activity coefficientAbstract
Thermodynamic calculations have been carried out for growing crystalline Si1-xGex solid solution epitaxial films on Si<100> and Si<111> substrates from a tin solution-melt by liquid-phase epitaxy. Nanoclusters are thought to be involved in crystal growth. To determine the optimal conditions for obtaining a Si1-xGex crystal from a Si-Ge-Sn solution system, we focused on the change in Gibbs energy and the size of the nanoclusters involved in crystal formation. On this basis, a film with a thickness of 5 µm to 8 µm was experimentally obtained in the temperature range from Тc.s.=1135 K (crystallization start temperature) to Тc.t.=1023 K (crystallization termination temperature). It was also possible to reduce the dislocation density at the substrate-film boundary (up to 3 ´ 104 cm-2) and along the growth direction (film surfaces up to 8 ´ 103 cm-2). A method of thermodynamic prediction for obtaining semiconductor structures has been developed.
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Wang and N. Quitoriano, "SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions", Journal of Crystal Growth, vol. 510, pp. 65-75, 2019. Available: 10.1016/j.jcrysgro.2019.01.014 DOI: https://doi.org/10.1016/j.jcrysgro.2019.01.014
P. Hansson, J. Werner, L. Tapfer, L. Tilly and E. Bauser, "Liquid‐phase epitaxy and characterization of Si1−xGexlayers on Si substrates", Journal of Applied Physics, vol. 68, no. 5, pp. 2158-2163, 1990. Available: 10.1063/1.346572 DOI: https://doi.org/10.1063/1.346572
. S. Chaurasia, S. Raghavan and S. Avasthi, "High Quality Epitaxial Germanium on Si (110) using Liquid Phase Crystallization for Low—Cost III-V Solar-Cells", 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018. Available: 10.1109/pvsc.2018.8548031 DOI: https://doi.org/10.1109/PVSC.2018.8548031
. G. Wang et al., "A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)", Applied Physics Letters, vol. 94, no. 10, p. 102115, 2009. Available: 10.1063/1.3097245 DOI: https://doi.org/10.1063/1.3097245
. J. Speck, M. Brewer, G. Beltz, A. Romanov and W. Pompe, "Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers", Journal of Applied Physics, vol. 80, no. 7, pp. 3808-3816, 1996. Available: 10.1063/1.363334 DOI: https://doi.org/10.1063/1.363334
. E. Fitzgerald et al., "Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates", Applied Physics Letters, vol. 59, no. 7, pp. 811-813, 1991. Available:10.1063/1.105351 DOI: https://doi.org/10.1063/1.105351
. A. O'Reilly and N. Quitoriano, "Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy", Journal of Crystal Growth, vol. 483, pp. 223-227, 2018. Available: 10.1016/j.jcrysgro.2017.12.010. DOI: https://doi.org/10.1016/j.jcrysgro.2017.12.010
A. Saidov and A. Razzokov, "Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex", Siberian Journal of Physics, vol. 15, no. 2, pp. 84-91, 2020. Available: 10.25205/2541-9447-2020-15-2-84-91 DOI: https://doi.org/10.25205/2541-9447-2020-15-2-84-91
. Victor I. Fistul. Impurities in Semiconductors: Solubility, Migration and Interactions, CRC Press. 2004. DOI: https://doi.org/10.4324/9780203299258
. Gaskell, D.R., & Laughlin, D.E. Introduction to the Thermodynamics of Materials (6th ed.). CRC Press. 2017.
. S.Uda, X.Huang, S.Koh. Journal of Crystal Growth, vol. 281, pp. 481–491, 2005. DOI: https://doi.org/10.1016/j.jcrysgro.2005.04.072
. Liu, X. Y. "Heterogeneous nucleation or homogeneous nucleation?". The Journal of Chemical Physics, vol. 112 no. 22, pp. 9949–9955, 2000. Available: 10.1063/1.481644. DOI: https://doi.org/10.1063/1.481644
. Razzokov, A.Sh., Khakimov, N.Z., Davletov, I.Y., Eshchanov, Kh.O. and Matnazarov, A.R. "Obtaining a structurally perfect semiconductor solid solution Si1-xGex with electrophysical and photoelectric properties,"Scientific-technical journal: vol. 24: Iss. 5, pp. 11, 2020. Available at: https://uzjournals.edu.uz/ferpi/vol24/iss5/11
. Arthur D. Pelton. Phase Diagrams and Thermodynamic Modeling of Solutions, Elsevier, 2019. DOI:10.1016/C2013-0-19504-9 DOI: https://doi.org/10.1016/C2013-0-19504-9
. Hans J. Scheel, T. Fukuda. “Crystal Growth Technology”, Wiley & Sons, Chichester UK hardcover, 2003. DOI: https://doi.org/10.1002/0470871687
. Nguyen T. K. Thanh, N. Maclean, and S. Mahiddine, Mechanisms of Nucleation and Growth of Nanoparticles in Solution, Chemical Reviews, 114(15), pp. 7610-7630, 2014. DOI: https://doi.org/10.1021/cr400544s
. Ivan Markov. Crystal Growth For Beginners: Fundamentals of Nucleation, Crystal Growth And Epitaxy (Third ed.). Singapore: World Scientific, 2016. DOI: 10.1142/10127 DOI: https://doi.org/10.1142/10127
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