Fabrication and characterization of heterojunction for CdS thin films and CuAlO<sub>2</sub> ceramic pill substrate
AbstractIn this research paper, CdS thin films were deposited by thermal evaporation in vacuum on CuAlO2 ceramic pill substrate. From the data of I-V measurements at low temperature (20-300 K) the junction barrier height, ideality factor and series resistance values can be evaluated by using thermionic emission (TE) theory and Cheung’s method. The junction barrier height and ideality factor were found to be strong temperature dependence. Evaluation of forward I-V data reveals a decrease in the zero-bias barrier height, but an increase in the ideality factor with decrease in temperature. In part of C-V measurements at room temperature, the obtained built-in potential value being 0.586 V is well consistent with the junction barrier height value evaluated from I-V measurements.
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