The study on un-doped/boron doped/un-doped triple SEG in vertical NAND flash memory
คำสำคัญ:
SEG, Vertical Channel Etch, Boron Concentration, GSL Vth, Boron Dopedบทคัดย่อ
Selective epitaxial growth (SEG) plays a critical role in vertical NAND flash memory because it serves as a ground select line (GSL) transistor, which is used to control the cell current in the vertical channel. In this study, different channel hole sizes between the adjacent hole and away hole from the common source line (CSL) were detected after vertical channel etch (VCE). This discrepancy severely impacts the boron concentration of SEG applied through ex-situ boron implantation, and results in large GSL Vth variations. Novel in-situ boron-doping of triple-layered un-doped/boron doped/un-doped SEG was developed to solve the high variation of the boron concentration in SEG caused by different channel hole sizes.
A series of experiments was designed and performed to determine the optimal height and concentration of the boron doped SEG. Finally, the optimized boron-doped SEG in the triple-layer SEG was shown to improve the distribution of the GSL Vth without deterioration of the SEG height uniformity.
Downloads
เอกสารอ้างอิง
Semiconductor Industry Association, “2013 Executive summary,” International Technology Roadmap for Semiconductors (ITRS), Aug 21, 2013
R. Katsumata, M. Kito, Y. Fukuzumi, M. Kido, H. Tanaka, Y. Komori, M. Ishiduki, J. Matsunami, T. Fujiwara, Y. Nagata, L. Zhang, Y. Iwata, R. Kirisawa, H. Aochi, and A. Nitayama, “Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra-high density storage devices,” in the Symposium on VLSI Technology, 2009, pp. 136-137.
“세계 최초 3차원 수직구조낸드(3D V-NAND)플래시 메모리 양산”, 120 Samsung Electronics Company, 2013, Retrived on January 28
J. Karttunen, J. Kiihamaki, and S. Franssila, "Loading effects in deep silicon etching," Proceeding of SPIE, vol. 4174, pp. 90-97, 2000.
C.-Y. Lung, Y.-A. Chung, M. Wu, H.-J. Lee, N. Lian, T. Yang, K-C. Chen, C-Y. Lu, "Pre-epitaxial plasma etch treatment for the selective epitaxial growth of silicon in high aspect ratio 3D NAND memory," 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, NY, USA, 6-9 May 2019.
H. H. Radamson , M. Kolahdouz, R. Ghandi, and J. Hållsted, "Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)" Thin Solid Films, vol. 517, pp. 84-86, 2008.
Y. Fukuzumi, R. Katsumata, M. Kito, M. Kido, M. Sato, H. Tanaka, Y. Nagata, Y. Matsuoka, Y. Iwata, H. Aochi, and N. Akihiro, “Optimal integration and characteristics of vertical array devices for ultra-high density, bit-cost scalable flash memory,” in the IEEE International Conference on Electron Devices Meeting (IEDM), Washington, DC, USA, 10-12 December 2007; pp. 449-452
ดาวน์โหลด
เผยแพร่แล้ว
วิธีการอ้างอิง
ฉบับ
บท
การอนุญาต
ลิขสิทธิ์ (c) 2021 Journal of Metals, Materials and Minerals
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Authors who publish in this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
