Photoluminescence of extremely thin InGaAs/InP Single Quantum Wells grown by Organometallic Vapor Phase Epitaxy

Authors

  • Wisanu PECHARAPA Department of Applied Physics, King Mongkut’s Institute of Technology Ladkrabang
  • Wicharn TECHIDHEERA Department of Applied Physics, King Mongkut’s Institute of Technology Ladkrabang
  • P. Kraisingdecha Department of Physics, Silpakorn University
  • Jiti NUKEAW Department of Applied Physics, King Mongkut’s Institute of Technology Ladkrabang

Abstract

The optical properties of extremely thin In0.53Ga0.47As/InP single quantum wells (SQWs) grown by Organometallic Vapor Phase Epitaxy (OMVPE) were extensively investigated by photoluminescence spectroscopy (PL). The PL spectra of 3 samples with different well widths of 2 monolayers (ML), 3 ML, and 4ML were carried out. The spectra exhibit a single luminescence peak, corresponding to the recombination between the first electron subband and the first heavy-hole subband (e1-hh1).

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References

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Published

2022-08-19

How to Cite

[1]
W. PECHARAPA, W. TECHIDHEERA, P. Kraisingdecha, and J. NUKEAW, “Photoluminescence of extremely thin InGaAs/InP Single Quantum Wells grown by Organometallic Vapor Phase Epitaxy”, J Met Mater Miner, vol. 13, no. 1, pp. 1–5, Aug. 2022.

Issue

Vol. 13 No. 1 (2003)

Section

Original Research Articles

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Copyright (c) 2003 The Journal of Metals, Materials and Minerals (JMMM)

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