Non-destructive silicon quantification in low-level Si-doped diamond-like carbon films

Phitsanu POOLCHARUANSIN; Nanthapat CHANAPAI

doi:10.55713/jmmm.v36i4.2538

Authors

Phitsanu POOLCHARUANSIN Department of Physics, Faculty of Science, Mahasarakham University, Mahasarakham, 44150, Thailand https://orcid.org/0000-0001-9650-9888
Nanthapat CHANAPAI Department of Physics, Faculty of Science, Mahasarakham University, Mahasarakham, 44150, Thailand

DOI:

https://doi.org/10.55713/jmmm.v36i4.2538

Keywords:

Diamond-like carbon, Silicon doping, Co-deposition, Raman spectroscopy, X-ray photoelectron spectroscopy

Abstract

Diamond-like carbon (DLC) films offer exceptional mechanical and chemical properties but face limitations in adhesion and thermal stability, which restrict their broader applications. Current characterization methods for silicon-doped DLC films rely on destructive techniques, which pose challenges for industrial quality control. We investigate the effects of low-level silicon doping on the microstructure and optical properties of DLC while developing a non-destructive quantification method. Films were synthesized by co-deposition combining pulsed filtered cathodic vacuum arc and RF magnetron sputtering. Silicon incorporation was controlled by varying RF power up to 30 W. Characterization employed X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and spectroscopic ellipsometry, yielding silicon concentrations of 1.55 at.% to 4.64 at.% as determined by XPS. Microstructural analysis reveals C–Si bond formation and strengthened tetrahedral bonding networks with reduced graphitic clusters upon silicon doping. Wavelength-averaged optical properties show systematic decreases in both extinction coefficient and refractive index with increasing silicon content. Spectroscopic ellipsometry combined with Bruggeman effective-medium approximation modeling achieved a strong linear correlation (R² = 0.97) with XPS-measured silicon concentrations. This non-destructive quantification at sub-5 at.% silicon levels, beyond the sensitivity range of conventional destructive techniques, offers a practical route to industrial-scale quality control of Si‒DLC films.

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Author Biography

Phitsanu POOLCHARUANSIN, Department of Physics, Faculty of Science, Mahasarakham University, Mahasarakham, 44150, Thailand

Poolcharuansin received his first degree and Master's degree from Chiang Mai Unversity in Physics and Applied Physics, respectively. He completed his Ph.D. degree in Electrical Engineering & Electronics from the University of Liverpool. Currently, he is working as a lecturer in the department of physics at Mahasarakham University, Thailand.

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