A study of the electrical and optical properties of AZO thin film by controlling pulse frequency of HiPIMS

Peerapong  NUCHUAY; Chinoros  LAONGWAN; Wimol  PROMCHAM; Pacharamon  SOMBOONSAKSRI; Sukon  KALASUNG; Chanunthorn  CHANANONNAWATHORN; Pitak  EIAMCHAI; Viyapol  PATTHANASETTAKUL; Chamnan  PROMJANTUK; Kittikhun  SEAWSAKUL; Noppadon  NUNTAWONG; Mati  HORPRATHUMB; Saksorn  LIMWICHEAN

doi:10.55713/jmmm.v33i2.1696

Authors

Peerapong NUCHUAY Program of Industrial Electrical Technology, Faculty of Science and Technology, Suratthani Rajabhat University, Mueang, Surat Thani, 841000, Thailand
Chinoros LAONGWAN Program of Industrial Electrical Technology, Faculty of Science and Technology, Suratthani Rajabhat University, Mueang, Surat Thani, 841000, Thailand
Wimol PROMCHAM Program of Industrial Electrical Technology, Faculty of Science and Technology, Suratthani Rajabhat University, Mueang, Surat Thani, 841000, Thailand
Pacharamon SOMBOONSAKSRI National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120 Thailand
Sukon KALASUNG National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120 Thailand
Chanunthorn CHANANONNAWATHORN National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120 Thailand
Pitak EIAMCHAI National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120 Thailand
Viyapol PATTHANASETTAKUL National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120 Thailand
Chamnan PROMJANTUK Department of physics, Faculty of Science and Technology, Nakhon Ratchasima Rajabhat University, Nakhon Ratchasima Province, 30000, Thailand
Kittikhun SEAWSAKUL Educational Research Development and Demonstration Institute, Srinakharinwirot University, Ongkharak, Nakhon Nayok Province, 26120, Thailand
Noppadon NUNTAWONG National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120 Thailand
Mati HORPRATHUMB National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120 Thailand
Saksorn LIMWICHEAN National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120 Thailand

DOI:

https://doi.org/10.55713/jmmm.v33i2.1696

Keywords:

AZO thin film, HiPIMS, Pulse frequency, Transparent conductive oxides

Abstract

The transparent conductive oxide (TCO) which is AZO thin film was prepared by controlling pulse frequency at 100 Hz to 900 Hz using high-power impulse magnetron sputtering (HiPIMS). All samples were deposited on silicon (100) and glass slide substrates which the thickness was kept constant at 400 nm. The surface morphology was investigated by field-emission scanning electron microscope (FE-SEM), crystallinity by Grazing Incidence X-ray Diffraction (GI-XRD), optical transparency by UV-Vis-NIR spectrophotometry, and electrical properties using Hall effect instrument. It was found that the AZO films exhibited dense columnar structure. The GI-XRD patterns of AZO films demonstrated the crystal growth direction which was preferred the hexagonal wurtzite structure at (002) and (103) planes. The AZO film prepared by using 700 Hz of frequency (duty cycle 7%) showed the average visible transmittance (T_avg) at 82% in the visible region (380 nm to 780 nm). Additionally, the resistivity, high mobility and carrier concentration of AZO film were found to be 3.0 × 10^-3 Ω.cm^-1, 10.53 cm²∙Vs^-1 and 1.82 × 10²⁰∙cm^-3, respectively. The fabrication of AZO film presented excellent electrical and optical properties which could be applied in several optoelectronic applications.

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